Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect

We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.Comment: 14 pages, 4 figure

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions

Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on Si(100) substrate

We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultra thin films are reflected in the interesting transport and magnetic properties of these films. On the other hand, there are no influences of compositional in-homogeneity and surface/interface roughness on the magnetic and transport properties of the films.Comment: 13 pages, 7 figures, Submitted to Phys. Rev.

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba effect is used. By varying the robustness of the Rashba coupling and the width of the wire, weak and strong coupling regimes are identified. Perfect electron spin-modulation is found for the former regime, regardless of the incident Fermi energy and mode number. In the latter however, the spin-conductance has a strong energy dependence due to a nontrivial subband intermixing induced by the strong Rashba coupling. This would imply a strong suppression of the spin-modulation at higher temperatures and source-drain voltages. The results may be of relevance for the implementation of quasi-one-dimensional spin transistor devices.Comment: 19 pages (incl. 9 figures). To be published in PR

Filtering spin with tunnel-coupled electron wave guides

We show how momentum-resolved tunneling between parallel electron wave guides can be used to observe and exploit lifting of spin degeneracy due to Rashba spin-orbit coupling. A device is proposed that achieves spin filtering without using ferromagnets or the Zeeman effect.Comment: 4 pages, 4 figures, RevTex

An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts.Comment: 4 pages, 2 figure

Mesoscopic Stern-Gerlach device to polarize spin currents

Spin preparation and spin detection are fundamental problems in spintronics and in several solid state proposals for quantum information processing. Here we propose the mesoscopic equivalent of an optical polarizing beam splitter (PBS). This interferometric device uses non-dispersive phases (Aharonov-Bohm and Rashba) in order to separate spin up and spin down carriers into distinct outputs and thus it is analogous to a Stern-Gerlach apparatus. It can be used both as a spin preparation device and as a spin measuring device by converting spin into charge (orbital) degrees of freedom. An important feature of the proposed spin polarizer is that no ferromagnetic contacts are used.Comment: Updated to the published versio

Measuring the decoherence rate in a semiconductor charge qubit

We describe a method by which the decoherence time of a solid state qubit may be measured. The qubit is coded in the orbital degree of freedom of a single electron bound to a pair of donor impurities in a semiconductor host. The qubit is manipulated by adiabatically varying an external electric field. We show that, by measuring the total probability of a successful qubit rotation as a function of the control field parameters, the decoherence rate may be determined. We estimate various system parameters, including the decoherence rates due to electromagnetic fluctuations and acoustic phonons. We find that, for reasonable physical parameters, the experiment is possible with existing technology. In particular, the use of adiabatic control fields implies that the experiment can be performed with control electronics with a time resolution of tens of nanoseconds.Comment: 9 pages, 6 figures, revtex